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參數(shù)資料
| 型號： | 2SC2406 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type |
| 中文描述： | 50 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SC2406 |
1
Transistor
2SA1034, 2SA1035
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC2405 and 2SC2406
I
Features
G
Low noise voltage NV.
G
High foward current transfer ratio h
FE
.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
I
Electrical Characteristics
(Ta=25C)
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–35
–55
–35
–55
–5
–100
–50
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
2SA1034
2SA1035
2SA1034
2SA1035
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE
f
T
NV
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –5V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
*2
V
CE
= –1V, I
C
= –100mA
*2
V
CB
= –5V, I
E
= 2mA, f = 200MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
–35
–55
–35
–55
–5
180
typ
– 0.7
200
max
–100
–1
700
– 0.6
–1.0
150
Unit
nA
μ
A
V
V
V
V
V
MHz
mV
*
h
FE1
Rank classification
Rank
R
S
T
h
FE
180 ~ 360
260 ~ 520
360 ~ 700
2SA1034
FR
FS
FT
2SA1035
HR
HS
HT
Marking symbol :
F
(2SA1034)
H
(2SA1035)
Unit: mm
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
*2
Pulse measurement
Marking
Symbol
2SA1034
2SA1035
2SA1034
2SA1035
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1035 | Silicon PNP epitaxial planer type |
| 2SA1048L | TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
| 2SA1048 | TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
| 2SA1049 | TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
| 2SA1061 | SILICON EPITAXAL BASE LESA TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC24060SL | 功能描述:TRANS NPN 55VCEO 50MA MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC2406R | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Si NPN Triple Diffused Mesa |
| 2SC2406S | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Si NPN Triple Diffused Mesa |
| 2SC2406T | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Si NPN Triple Diffused Mesa |
| 2SC2407 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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