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參數(shù)資料
| 型號： | 2SC2411KT146Q |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SMT3, SC-59, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 71K |
| 代理商： | 2SC2411KT146Q |
2SC2411K
Transistors
Rev.A
2/3
Electrical characteristics (Ta = 25
°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
Min.
40
32
5
120
250
6.5
1
390
0.6
VIC
= 100A
IC
= 1mA
IE
= 100A
VCB
= 20V
VEB
= 4V
VCE
= 3V, IC = 100mA
IC/IB
= 500mA/50mA
VCE
= 5V, IE = 20mA, f = 100MHz
VCB
= 10V, IE = 0A, f = 1MHz
V
A
V
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Packaging Specifications and hFE
T146
3000
QR
hFE
2SC2411K
Type
Package
Code
Taping
Basic ordering unit (pieces)
hFE values are classified as follows:
Item
Q
R
hFE
120 to 270
180 to 390
Electrical characteristic curves
0.8
0.2
0.4
0.9
0.7
0.5
1.1
0.3
1.0
0.6
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
Ta
=100°C
25°C
80
°C
25
°C
55°C
VCE
=6V
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1
Grounded emitter propagation
characteristics
1
0
2345
0
100
50
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB
=0A
Ta
=25°C
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.2
Grounded emitter output
characteristics (
Ι )
0.5
1
2
5
10
20
50 100
1000
200
500
0.2
0.5
1
0.02
0.05
0.1
Ta
=25°C
Ta
lC/lB
=10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2411KT146Q/R | 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, Driver, 32V, 500mA, SM |
| 2SC2411KT146R | 功能描述:兩極晶體管 - BJT NPN 32V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC2411KXLT1 | 制造商:WILLAS 制造商全稱:WILLAS 功能描述:Medium Power Transistor |
| 2SC2411-P | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Epitaxial Transistors |
| 2SC2411-Q | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Epitaxial Transistors |
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