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參數(shù)資料
| 型號： | 2SC2459 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-4E1A, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 378K |
| 代理商： | 2SC2459 |
2SC2459
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2459
Audio Amplifier Applications
High breakdown voltage: VCEO = 120 V (max)
High DC current gain: hFE = 200~700
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SA1049.
Small package.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
200
700
Collector-emitter saturation voltage
VCE (sat)
IC = 10 mA, IB = 1 mA
0.3
V
Transition frequency
fT
VCE = 6 V, IC = 1 mA
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
3.0
pF
Noise figure
NF
VCE = 6 V, IC = 0.1 mA,
f
= 1 kHz, RG = 10 kΩ
1.0
10
dB
Note: hFE classification GR: 200~400, BL: 350~700
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
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| 2SC2462LBTR | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2462LD01 | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2462LCTR-E | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2459_03 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Amplifier Applications |
| 2SC2459BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SPAK |
| 2SC2459-BL(F) | 制造商:Toshiba 功能描述:NPN 120V 0.1A 350 to 700 MINI Bulk |
| 2SC2459GR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SPAK |
| 2SC2459-GR(F) | 制造商:Toshiba 功能描述:NPN 120V 0.1A 200 to 400 MINI Bulk |
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