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參數(shù)資料
| 型號： | 2SC2510A |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 2-13B1A, 4 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 192K |
| 代理商： | 2SC2510A |
2SC2510A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
V (BR) CEO
IC = 100mA, IB = 0
35
—
V
Collector-Emitter Breakdown Voltage
V (BR) CES
IC = 100mA, VEB = 0
55
—
V
Emitter-Base Breakdown Voltage
V (BR) EBO
IE = 1mA, IC = 0
4
—
V
DC Current Gain
hFE
VCE = 5V, IC = 10A *
10
—
Collector Output Capacitance
Cob
VCB = 28V, IE = 0
f = 1MHz
—
450
600
pF
Power Gain
Gp
12.2
13.3
—
dB
Input Power
Pi
—
7
9
WPEP
Collector Efficiency
ηC
35
—
%
Intermodulation Distortion
IMD
VCC = 28V, f1 = 28.000MHz,
f2 = 28.001MHz
Iidle = 100mA
Po = 150WPEP (Fig.)
—
30
dB
Series Equivalent Input Impedance
Zin
—
1.4
j0.9
—
Series Equivalent Output Impedance
Zout
VCC = 28V, f1 = 28.000MHz,
f2 = 28.001MHz,
Po = 150WPEP
—
2.3
j0.9
—
* Pulse Test:
Pulse Width ≤ 100s, Duty Cycle ≤ 3%
RESTRICTIONS ON PRODUCT USE
030619EAA
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
2
2005-03-09
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| 2SC2512 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
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| 2SC2534 | 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC2539 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2511 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9260V .1A .32W ECB |
| 2SC2512 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. TO-9230V .01A .3W BEC |
| 2SC2516 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC2516A | 制造商:NEC Electronics Corporation 功能描述: 制造商:NEC Electronics Corporation 功能描述:Electronic Component |
| 2SC2516-L | 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Bulk |
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