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參數(shù)資料
| 型號： | 2SC2612 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SC2612 |
2SC2612
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
V
CEO(sus)
400
—
V
I
C = 0.2 A, RBE = ∞,
L = 100 mH
V
CEX(sus)
400
—
V
I
C = 3 A, IB1 = –IB2 = 0.6 A
V
BE = –5 V, L = 180 H,
Clamped
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
V
I
E = 10 mA, IC = 0
Collector cutoff current
I
CBO
—
100
AV
CB = 400 V, IE = 0
I
CEO
—
100
AV
CE = 350 V, RBE = ∞
DC current transfer ratio
h
FE1
15
—
V
CE = 5 V, IC = 1.5 A*
1
h
FE2
7—
—
V
CE = 5 V, IC = 3.0 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
—
1.0
V
I
C = 1.5 A, IB = 0.3 A*
1
Base to emitter saturation
voltage
V
BE(sat)
—
1.5
V
I
C = 1.5 A, IB = 0.3 A*
1
Turn on time
t
on
—
1.0
sI
C = 3 A, IB1 = –IB2 = 0.6 A,
Storage time
t
stg
—
1.2
2.5
sV
CC 150 V
Fall time
t
f
—
1.0
s
Note:
1. Pulse test
Maximum Collector Dissipation
Curve
45
30
15
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
10
1.0
0.1
0.01
Collector
current
I
C
(A)
0.001
1
3
30
300
10
100
1,000
Collector to emitter voltage VCE (V)
iC(peak)
ICmax(Continuous)
DC
Operation
T
C =
25
°C
PW
=
10
ms
1 ms
250
s
50
s
Area of Safe Operation
25
s
Ta = 25
°C, 1 Shot
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2616 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 500V 10A 100W BEC |
| 2SC2618RCTL-E | 制造商:Renesas Electronics 功能描述:NPN Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Transistor,35V,0.5A,MPAK 制造商:Renesas 功能描述:Trans GP BJT NPN 35V 0.5A 3-Pin MPAK T/R |
| 2SC2618RDTR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
| 2SC2619 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-5930V .1A .15W ECB SURFACE MOUNT |
| 2SC2620Q | 制造商:Renesas Electronics Corporation 功能描述: |
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