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參數(shù)資料
| 型號： | 2SC2647 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For high-frequency amplification) |
| 中文描述： | 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 225K |
| 代理商： | 2SC2647 |
2SC2647
2
SJC00121BED
IC VBE
VCE(sat) IC
hFE IC
PC Ta
IC VCE
IB VBE
fT IE
Zrb IE
Cre VCE
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
018
612
0
12
10
8
6
4
2
Ta
= 25°C
IB
= 100 A
80
A
60
A
40
A
20
A
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
0
1.2
0.4
0.8
1.6
0
120
100
80
60
40
20
VCE
= 10 V
Ta
= 25°C
Base-emitter voltage V
BE (V)
Base
current
I
B
(
A
)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
VCE
= 10 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 75°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
0.1
1
10
100
0
300
250
200
150
100
50
VCE
= 10 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
0.1
1
10
100
0
600
500
400
300
200
100
Ta
= 25°C
VCB
= 10 V
6 V
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
0.1
1
10
0
80
60
20
50
70
40
10
30
f
= 2 MHz
Ta
= 25°C
VCB
= 6 V
10 V
Reverse
transfer
impedance
Z
rb
(
)
Emitter current I
E (mA)
0.1
1
10
100
0
2.4
2.0
1.6
1.2
0.8
0.4
IC
= 1 mA
f
= 10.7 MHz
Ta
= 25°C
Collector-emitter voltage V
CE (V)
Common-emitter
reverse
transfer
capacitance
C
re
(pF
)
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