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參數資料
| 型號： | 2SC2946(1)-K |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MP-3, 3 PIN |
| 文件頁數： | 4/5頁 |
| 文件大?。?/td> | 204K |
| 代理商： | 2SC2946(1)-K |
Data Sheet D16187EJ1V0DS
2
2SC3569
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 0.5 A, IB1 = 0.1 A, L = 1 mH
400
V
Collector to emitter voltage
VCEX(SUS)1
IC = 0.5 A, IB1 =
IB2 = 0.1 A,
L = 180
H, clamped
450
V
Collector to emitter voltage
VCEX(SUS)2
IC = 1.0 A, IB1 = 0.2 A,
IB2 = 0.1 A,
L = 180
H, clamped
400
V
Collector cutoff current
ICBO
VCB = 400 V, IE = 0
10
A
Collector cutoff current
ICER
VCE = 400 V, RBE = 51
, Ta = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE = 400 V, VBE(OFF) =
1.5 V
10
A
Collector cutoff current
ICEX2
VCE = 400 V, VBE(OFF) =
1.5 V,
Ta = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
10
A
DC current gain
hFE1*VCE = 5.0 V, IC = 0.2 A
20
80
DC current gain
hFE2*VCE = 5.0 V, IC = 0.5 A
10
Collector saturation voltage
VCE(sat)*IC = 0.7 A, IB = 0.14 A
1.0
V
Base saturation voltage
VBE(sat)*IC = 0.7 A, IB = 0.14 A
1.2
V
Turn-on time
ton
1.0
s
Storage time
tstg
2.5
s
Fall time
tf
IC = 0.7 A, RL = 214
,
IB1 =
IB2 = 0.14 A, VCC 150 V
Refer to the test circuit.
1.0
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
HFE1
20 to 40
30 to 60
40 to 80
TYPICAL CHARACTERISTICS (Ta = 25
°°°°C)
To
ta
lP
o
we
rDis
s
ip
a
ti
o
n
P
T
(W
)
Collector to Emitter Voltage VCE (V)
Co
lle
c
to
rCu
rr
e
n
t
IC
(
m
A)
Case Temperature TC (
°C)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC2946-AZ-L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2958-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2958-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2959 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR SP-8 160V .5A 1W ECB |
| 2SC2959K | 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Bulk |
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