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參數(shù)資料
| 型號： | 2SC3075 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-7B1A, 3 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 171K |
| 代理商： | 2SC3075 |
2SC3075
2006-11-09
4
Safe Operating Area
Colle
ct
or
curr
ent
I C
(A
)
Colle
ct
or
curr
ent
I C
(
m
A
)
Base-emitter voltage VBE (V)
IC – VBE
Colle
ct
or
curr
ent
I C
(A
)
Collector current IC (A)
Switching Characteristics
Swi
tch
ing
time
(μ
s)
Base-emitter voltage VBE (V)
IC – VBE
Pulse width
tw (s)
rth – tw
T
ransie
nt
th
ermal
r
esi
st
an
ce
r th
(
°C
/W
)
Collector-emitter voltage VCE (V)
10
3
0
Common emitter
VCE = 5 V
40
25
Tc = 100°C
1
10
1
10
2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Curves should be applied in thermal limited area.
(Single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
0.1
0.001
100
0.01
0.1
1
10
100
1000
10
1
(1)
(2)
IC/IB = 10
IB1 = IB2
Pulse width = 20 μs
Duty cycle ≤ 1%
Tc = 25°C
0.1
0
100
10
30
50
3
5
1
0.3
0.5
0.1
0.2
0.3
0.4
0.5
tstg
tf
tr
0
Common emitter
VCE = 5 V
1000
800
600
400
200
0.2
0.4
0.6
0.8
1.2
1.0
40
25
Tc = 100°C
10
3
0.01
1
0.3
0.1
0.05
0.03
3
30
300
100
1000
0.5
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (continuous)
IC max (pulsed)*
VCEO max
1 ms*
10 μs*
100 μs*
DC operation
Tc = 25°C
100 ms*
10 ms*
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3075(LBSTA1) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC3075(Q) | 制造商:Toshiba 功能描述:NPN 400V 0.8A 20 to 100 PW-Mold Bulk |
| 2SC3075(TE16L1,NQ) | 制造商:Toshiba 功能描述:NPN Cut Tape 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 400V 0.8A PW-MOLD |
| 2SC3075_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching |
| 2SC3076 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANS. SC-6450V 2A 1W BCE |
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