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參數(shù)資料
| 型號(hào)： | 2SC3315 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For high-frequency amplification) |
| 中文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | NS-B1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 44K |
| 代理商： | 2SC3315 |
1
Transistor
2SC3315
Silicon NPN epitaxial planer type
For high-frequency amplification
I
Features
G
Optimum for high-density mounting.
G
Allowing supply with the radial taping.
G
Optimum for RF amplification of FM/AM radios.
G
High transition frequency f
T
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
4.0
±
0.2
marking
2.54
±
0.15
1.27
1.27
3
±
0
1
±
0
2
±
0
0
±
0
0
1
2
3
+
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
3
15
300
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Common emitter reverse transfer capacitance
Transition frequency
Noise figure
Power gain
Symbol
V
CBO
V
EBO
h
FE*
V
BE
C
re
f
T
NF
PG
Conditions
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA
V
CE
= 6V, I
C
= 1mA, f = 10.7MHz
V
CB
= 6V, I
E
= –1mA, f = 200MHz
V
CB
= 6V, I
E
= –1mA, f = 100MHz
V
CB
= 6V, I
E
= –1mA, f = 100MHz
min
30
3
65
450
20
typ
720
0.8
650
3.3
24
max
260
1.0
5.0
Unit
V
V
mV
pF
MHz
dB
dB
*
h
FE
Rank classification
Rank
C
D
h
FE
65 ~ 160
100 ~ 260
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