2SA1391 / 2SC3382
No.1942-1/6
Features
Adoption of FBET process.
AF amp.
Low-noise use.
Specifications ( ) : 2SA1391
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)60
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)200
mA
Collector Current (Pulse)
ICP
(--)400
mA
Collector Dissipation
PC
400
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
A
Emitter Cutoff Current
IEBO
VEB=(--)5V, IC=0A
(--)0.1
A
DC Current Gain
hFE1VCE=(--)6V, IC=(--)1mA
100*
560*
hFE2VCE=(--)6V, IC=(--)0.1mA
70
Continued on next page.
* : The 2SA1391 / 2SC3382 are classified by 1mA hFE as follws:
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN1942B
D0507GA TI IM TC-00001043 / O3103TN (KT) / 71598HA (KT) / 4277TA, TS
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customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
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SANYO Semiconductors
DATA SHEET
2SA1391 / 2SC3382
PNP / NPN Epitaxial Planar Silicon Transistors
Low Noise AF Amp Applications