No.1421-1/5
2SA1338/2SC3392
( ) : 2SA1338
Specifications
Absolute Maximum Ratings at Ta = 25C
0.4
0.95 0.95
1.9
2.9
0.5
1.5
2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1
Electrical Characteristics at Ta = 25C
Package Dimensions
unit:mm
2018B
[2SA1338/2SC3392]
Features
Adoption of FBET process.
High breakdown voltage : VCEO=(–)50V.
Large current capacitiy and high fT.
Ultrasmall-sized package permitting sets to be small-
sized, slim.
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* : The 2SA1338/2SC3392 are classified by 10mA hFE as follows :
Continued on next page.
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Note : 2SA1338 Marking : AL, 2SC3392 Marking : AY
hFE rank : 4, 5, 6, 7
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1 : Base
2 : Emitter
3 : Collector
SANYO : CP
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SA1338 / 2SC3392
PNP/NPN Epitaxial Planar Silicon Transistor
High-Speed Switching Applications
Ordering number : ENN1421B
80906 / 83002TN (KT)/71598HA (KT)/3197KI/1114KI, MT