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參數(shù)資料
| 型號： | 2SC3420-BL |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 20 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-8H1A, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 122K |
| 代理商： | 2SC3420-BL |
2SC3420
2004-07-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3420
Strobe Flash Applications
Audio Power Amplifier Applications
High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A)
: hFE = 70 (min) (VCE = 2 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
High collector power dissipation: PC = 10 W (Tc = 25°C),
PC = 1.5 W (Ta = 25°C)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
VCES
40
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
8
V
DC
IC
5
Collector current
Pulse
(Note 1)
ICP
8
A
Base current
IB
1
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max)
Duty cycle = 30% (max)
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 40 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 8 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
―
V
hFE (1)
(Note 2)
VCE = 2 V, IC = 0.5 A
140
―
600
DC current gain
hFE (2)
VCE = 2 V, IC = 4 A
70
―
Collector-emitter saturation voltage
VCE (sat)
IC = 4 A, IB = 0.1 A
―
1.0
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 4 A
―
1.5
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
―
100
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
40
―
pF
Note 2: hFE (1) classification Y: 140 to 240, GR: 200 to 400, BL: 300 to 600
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC3420Y | 5 A, 20 V, NPN, Si, POWER TRANSISTOR |
| 2SC3421-O | 1 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 2SC3421 | 1 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 2SC3422-Y | 3 A, 40 V, NPN, Si, POWER TRANSISTOR |
| 2SC3422-O | 3 A, 40 V, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3420-GR(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 20V 5A 3-Pin TO-126IS |
| 2SC3420-Y(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC3421 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC3421-O(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC3421-Y(Q) | 制造商:Toshiba 功能描述:NPN Bulk 制造商:Toshiba America Electronic Components 功能描述:Tr.,NPN,120V/1A,hfe=120to240,TO-126IS 制造商:Toshiba 功能描述:Trans GP BJT NPN 120V 1A 3-Pin TO-126IS |
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