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參數(shù)資料
| 型號： | 2SC3460-L |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PB, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SC3460-L |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
800V/6A Switching Regulator Applications
Ordering number:ENN1594B
2SC3460
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61004TN (PC)/N1098HA (KT)/4237AT/3085KI/D054KI, TS No.1594–1/4
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2022A
[2SC3460]
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Tc=25C
Continued on next page.
* : The hFE1 of the 2SC3460 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
PW
≤300s, Duty Cycle≤10%
Features
High breakdown voltage and high reliability.
High-speed switching (tf : 0.1s typ).
Wide ASO.
Adoption of MBIT process.
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PDF描述 |
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| 2SC3460K | 6 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-218 |
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| 2SC3466 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO-3PB 1200V 8A 120W BCE |
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| 2SC3468E | 制造商:Sony Semiconductor Solutions Division 功能描述: |
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