
UTC 2SC3468
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD.
3
www.unisonic.com.tw
QW-R208-037,A
25
100
VCE (sat) - IC
5
2
7
Collector-to-Emitter
Saturation
Voltage,
V
CE
(sat)
(V)
5
Collector Current, Ic (mA)
1.0
3
10
2
1.0
3
10
5
77
2
5
37
7
25
100
VBE (sat) - IC
3
7
3
7
Base-to-Emitter
Saturation
Voltage,
V
BE
(s
at
)(V)
5
1.0
3
10
2
1.0
5
2
10
IC / IB = 10
77
2
5
37
5
Collector Current, Ic (mA)
IC / IB = 10
7
5
3
2
0.1
3
0.2
0.4
IC - VBE
0
40
80
100
Co
lle
cto
rCu
rre
n
t,Ic
(mA)
0
Base-to-Emitter Voltage, VBE (V)
1.0
20
60
120
0.6
0.8
5
3
100
A S O
2
7
5
2
Co
lle
cto
rCu
rre
n
t,Ic
(mA)
5
10
2
5
10
3
100
ICP
77
3
2
5
VCE = 10V
Collector-to-Emitter Voltage, VCE (V)
T
a
=
75
℃
25
℃
-2
5
℃
2
7
3
IC
DC
Op
era
tion
50
0μ
s
10
m
s
1m
s
80
60
Pc - Ta
0
0.8
1.0
Collector
Dissipation,
Pc
(W)
0
40
160
0.4
1.2
20
100
140
120
0.2
Ambient Temperature, Ta (℃)
0.6
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.