參數(shù)資料
型號: 2SC3470E
元件分類: 小信號晶體管
英文描述: SMALL SIGNAL TRANSISTOR
封裝: SPAK-3
文件頁數(shù): 2/5頁
文件大?。?/td> 23K
代理商: 2SC3470E
2SC3470
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
55
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
100
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
55
——V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
——V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
——V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
0.5
AV
CB = 18 V, IE = 0
Emitter cutoff current
I
EBO
0.5
AV
EB = 2 V, IC = 0
DC current transfer ratio
h
FE*
1
250
1200
V
CE = 12 V, IC = 2 mA
Base to emitter voltage
V
BE
0.75
V
CE = 12 V, IC = 2 mA
Collector to emitter saturation
voltage
V
CE(sat)
0.2
V
I
C = 10 mA, IB = 1 mA
Gain bandwidth product
f
T
230
MHz
V
CE = 12 V, IC = 2 mA
Collector output capacitance
Cob
1.8
3.5
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Note:
1. The 2SC3470 is grouped by h
FE as follows.
DE
F
250 to 500
400 to 800
600 to 1200
See characteristic curves of 2SC1345.
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