參數(shù)資料
型號： 2SC3496A
廠商： PANASONIC CORP
元件分類： 功率晶體管
英文描述： Silicon NPN triple diffusion planar type
中文描述： 1 A, 900 V, NPN, Si, POWER TRANSISTOR
封裝： ROHS COMPLIANT, N-G1, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 98K
代理商： 2SC3496A
Power Transistors
2SC3496, 2SC3496A
Silicon NPN triple diffusion planar type
1
Publication date: March 2003
SJD00104AED
For power switching
■
Features
High-speed switching
High collector-base voltage (Emitter open) V
CBO
Satisfactory linearity of forward current transfer ratio h
FE
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
3.4
±
0.3
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SC3496
V
CBO
900
V
2SC3496A
1
000
Collector-emitter voltage
(E-B short)
2SC3496
V
CES
900
V
2SC3496A
1
000
Collector-emitter voltage
(Base open)
2SC3496
V
CEO
800
V
2SC3496A
900
Emitter-base voltage (Collector open)
V
EBO
7
V
Base current
I
B
I
C
0.3
A
Collector current
1
A
Peak collector current
I
CP
2
A
Collector power
P
C
30
W
dissipation
T
a
=
25
°
C
1.3
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SC3496
V
CEO
I
C
=
1 mA, I
B
=
0
800
V
2SC3496A
900
Collector-base cutoff current
(Emitter open)
2SC3496
I
CBO
V
CB
=
900 V, I
E
=
0
V
CB
=
1
000 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
V
CE
=
5 V, I
C
=
0.05 A
V
CE
=
5 V, I
C
=
0.5 A
I
C
=
0.2 A, I
B
=
0.04 A
I
C
=
0.2 A, I
B
=
0.04 A
V
CE
=
10 V, I
C
=
0.05 A, f
=
1 MHz
I
C
=
0.2 A
I
B1
=
0.04 A, I
B2
=
0.08 A
V
CC
=
250 V
50
μ
A
2SC3496A
50
Emitter-base cutoff current (Collector open)
I
EBO
50
μ
A
Forward current transfer ratio
h
FE1
h
FE2
6
3
Collector-emitter saturation voltage
V
CE(sat)
1.5
V
Base-emitter saturation voltage
V
BE(sat)
f
T
1.0
V
Transition frequency
4
MHz
Turn-on time
t
on
1.0
μ
s
μ
s
μ
s
Storage time
t
stg
t
f
3.0
Fall time
1.0
8.5
±
0.2
1.0
±
0.1
0 to 0.4
6.0
±
0.2
0.8
±
0.1
R = 0.5
R = 0.5
1.0
±
0.1
0.4
±
0.1
(8.5)
(6.0)
(6.5)
1.3
(
(
2.54
±
0.3
1.4
±
0.1
5.08
±
0.5
1
2
3
1
±
0
2
±
0
1
±
0
1
+
–
3
+
–
4
±
0
4
±
1
±
0
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
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