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參數(shù)資料
| 型號(hào)： | 2SC3513 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 28K |
| 代理商： | 2SC3513 |
2SC3513
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
15
V
Collector to emitter voltage
11
V
Emitter to base voltage
2
V
Collector current
50
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CEO
I
EBO
I
CBO
h
FE
Cob
—
—
1
μ
A
μ
A
μ
A
V
CE
= 10 V, R
BE
=
∞
V
EB
= 1 V, I
C
= 0
V
CB
= 12 V, I
E
= 0
V
CE
= 5 V, I
C
= 20 mA
V
CB
= 5 V, I
E
= 0, f = 1 MHz
V
CE
= 5 V, I
C
= 20 mA
V
= 5 V, I
C
= 20 mA,
f = 900 MHz
Emitter cutoff current
—
—
1
Collector cutoff current
—
—
1
DC current transfer ratio
50
120
250
Collector output capacitance
—
1.0
1.5
pF
Gain bandwidth product
f
T
PG
—
6.0
—
GHz
Power gain
—
10
—
dB
Noise figure
NF
—
1.6
—
dB
V
= 5 V, I
C
= 5 mA,
f = 900 MHz
Note:
Marking is “IS–”.
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