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參數(shù)資料
| 型號(hào)： | 2SC3569 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING |
| 中文描述： | NPN硅三重?cái)U(kuò)散晶體管高壓高速開關(guān) |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 128K |
| 代理商： | 2SC3569 |
Data Sheet D16187EJ1V0DS
2
2SC3569
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
= 0.5 A, I
B1
= 0.1 A, L = 1 mH
400
V
Collector to emitter voltage
V
CEX(SUS)1
I
C
= 0.5 A, I
B1
=
I
B2
= 0.1 A,
L = 180
μ
H, clamped
450
V
Collector to emitter voltage
V
CEX(SUS)2
I
C
= 1.0 A, I
B1
= 0.2 A,
I
B2
= 0.1 A,
L = 180
μ
H, clamped
400
V
Collector cutoff current
I
CBO
V
CB
= 400 V, I
E
= 0
10
μ
A
Collector cutoff current
I
CER
V
CE
= 400 V, R
BE
= 51
, Ta = 125
°
C
1.0
mA
Collector cutoff current
I
CEX1
V
CE
= 400 V, V
BE(OFF)
=
1.5 V
10
μ
A
Collector cutoff current
I
CEX2
V
CE
= 400 V, V
BE(OFF)
=
1.5 V,
Ta = 125
°
C
1.0
mA
Emitter cutoff current
I
EBO
V
EB
= 5.0 V, I
C
= 0
10
μ
A
DC current gain
h
FE1
*
V
CE
= 5.0 V, I
C
= 0.2 A
20
80
DC current gain
h
FE2
*
V
CE
= 5.0 V, I
C
= 0.5 A
10
Collector saturation voltage
V
CE(sat)
*
I
C
= 0.7 A, I
B
= 0.14 A
1.0
V
Base saturation voltage
V
BE(sat)
*
I
C
= 0.7 A, I
B
= 0.14 A
1.2
V
Turn-on time
t
on
1.0
μ
s
Storage time
t
stg
2.5
μ
s
Fall time
t
f
I
C
= 0.7 A, R
L
= 214
,
I
B1
=
I
B2
= 0.14 A, V
CC
150 V
Refer to the test circuit.
1.0
μ
s
* Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
M
L
K
H
FE1
20 to 40
30 to 60
40 to 80
TYPICAL CHARACTERISTICS (Ta = 25
°
C)
T
T
Collector to Emitter Voltage V
CE
(V)
C
C
Case Temperature T
C
(
°
C)
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