參數(shù)資料
型號: 2SC3570-K-AZ
元件分類: 功率晶體管
英文描述: 5 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 2/5頁
文件大小: 156K
代理商: 2SC3570-K-AZ
Data Sheet D16188EJ1V0DS
2
2SC3570
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 2.0 A, IB1 = 0.4 A, L = 1 mH
400
V
Collector to emitter voltage
VCEX(SUS)1
IC = 2.0 A, IB1 =
IB2 = 0.4 A,
L = 180
H, clamped
450
V
Collector to emitter voltage
VCEX(SUS)2
IC = 4.0 A, IB1 = 0.8 A,
IB2 = 0.4 A,
L = 180
H, clamped
400
V
Collector cutoff current
ICBO
VCB = 400 V, IE = 0
10
A
Collector cutoff current
ICER
VCE = 400 V, RBE = 51
, Ta = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE = 400 V, VBE(OFF) =
1.5 V
10
A
Collector cutoff current
ICEX2
VCE = 400 V, VBE(OFF) =
1.5 V,
Ta = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
10
A
DC current gain
hFE1*VCE = 5.0 V, IC = 0.5 A
20
80
DC current gain
hFE2*VCE = 5.0 V, IC = 2.0 A
10
Collector saturation voltage
VCE(sat)*IC = 2.0 A, IB = 0.4 A
1.0
V
Base saturation voltage
VBE(sat)*IC = 2.0 A, IB = 0.4 A
1.2
V
Turn-on time
ton
1.0
s
Storage time
tstg
2.0
s
Fall time
tf
IC = 2.0 A, RL = 75
,
IB1 =
IB2 = 0.4 A, VCC 150 V
Refer to the test circuit.
0.7
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE1
20 to 40
30 to 60
40 to 80
TYPICAL CHARACTERISTICS (Ta = 25
°°°°C)
To
ta
lP
o
we
rDis
s
ip
a
ti
o
n
P
T
(W
)
Collector to Emitter Voltage VCE (V)
Co
lle
c
to
rCu
rr
e
n
t
IC
(
A
)
Case Temperature TC (
°C)
相關PDF資料
PDF描述
2SC3570-M 5 A, 400 V, NPN, Si, POWER TRANSISTOR
2SC3570-K 5 A, 400 V, NPN, Si, POWER TRANSISTOR
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2SC3571-AZ 7 A, 400 V, NPN, Si, POWER TRANSISTOR
2SC3571-L-AZ 7 A, 400 V, NPN, Si, POWER TRANSISTOR
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