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參數(shù)資料
| 型號(hào)： | 2SC3570-M-AZ |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 156K |
| 代理商： | 2SC3570-M-AZ |
2SK1933
Rev.3.00 Apr 27, 2006 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
900
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
10
A
Drain peak current
ID(pulse)*
1
30
A
Body to drain diode reverse drain current
IDR
10
A
Channel dissipation
Pch*
2
150
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
900
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
Zero gate voltage drain current
IDSS
—
250
A
VDS = 720 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.9
1.2
ID = 5 A, VGS = 10 V*
1
Forward transfer admittance
|yfs|
4.5
7
—
S
ID = 5 A, VDS = 20 V*
1
Input capacitance
Ciss
—
2620
—
pF
Output capacitance
Coss
—
830
—
pF
Reverse transfer capacitance
Crss
—
320
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
30
—
ns
Rise time
tr
—
140
—
ns
Turn-off delay time
td(off)
—
285
—
ns
Fall time
tf
—
170
—
ns
ID = 5 A, VGS = 10 V,
RL = 6
Body to drain diode forward voltage
VDF
—
0.9
—
V
IF = 10 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
1600
—
ns
IF = 10 A, VGS = 0,
diF/dt = 100 A/
s
Note:
1. Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SC3571-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SC3571-M(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SC3582 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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