- 您現在的位置：買賣IC網 > PDF目錄371506 > 2SC3707 (PANASONIC CORP) Silicon NPN epitaxial planer type(For UHF amplification) PDF資料下載
參數資料
| 型號： | 2SC3707 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For UHF amplification) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 38K |
| 代理商： | 2SC3707 |
1
Transistor
2SC3707
Silicon NPN epitaxial planer type
For UHF amplification
I
Features
G
Possible with the small current and low voltage.
G
High transition frequency f
T
.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Bae
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
10
7
2
10
50
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1.5V, I
C
= 0
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 1mA, f = 800MHz
V
CB
= 1V, I
E
= 0, f = 1MHz
V
CE
= 1V, I
C
= 1mA, f = 800MHz
V
CE
= 1V, I
C
= 1mA, f = 800MHz
V
CE
= 1V, I
C
= 1mA, f = 800MHz
min
50
typ
100
4
0.4
6
15
3.5
max
1
1
150
Unit
nA
μ
A
GHz
pF
dB
dB
dB
Marking symbol :
2X
Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure.
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC3709A | HIGH CURRENT SWITCHING APPLICATIONS |
| 2SC3709 | NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
| 2SC3710A | HIGH CURRENT SWITCHING APPLICATIONS |
| 2SC3710 | NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
| 2SC3714 | 2SC3714 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC370700L | 功能描述:TRANS NPN 7VCEO 10MA MINI-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC3708S-AA | 制造商:SANYO 功能描述:mom 80V 0.5A 140 to 280 NP Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 80V 0.5A TO-92 |
| 2SC3709A-Y(F) | 功能描述:兩極晶體管 - BJT NPN 50V 12A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC3710A-Y(F) | 制造商:Toshiba 功能描述:NPN 80V 12A 120 to 240 TO220NIS Bulk 制造商:Toshiba 功能描述:Trans GP BJT NPN 80V 12A 3-Pin(3+Tab) TO-220NIS 制造商:Toshiba 功能描述:POWER TRANSISTOR |
| 2SC3711 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR MINI 60V .1A .2W ECB |
發(fā)布緊急采購，3分鐘左右您將得到回復。