參數(shù)資料
型號(hào): 2SC3757
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: Silicon NPN epitaxial planer type(For high speed switching)
中文描述: 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝: ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 64K
代理商: 2SC3757
Transistors
2SC3757
Silicon NPN epitaxial planer type
1
For high speed switching
I
Features
High-speed switching
Low collector to emitter saturation voltage V
CE(sat)
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Allowing pair use with 2SA1738
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
40
V
Collector to emitter voltage
V
CES
V
EBO
I
CP
40
V
Emitter to base voltage
5
V
Peak collector current
300
mA
Collector current
I
C
P
C
T
j
100
mA
Collector power dissipation
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Marking Symbol: 2Y
Unit: mm
0.40
+0.10
(
1
+
2
+
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
0.16
+0.10
0
±
5
°
10
°
0
1
+
1
+
1: Base
2: Emitter
3: Collector
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
15 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
1 V, I
C
=
10 mA
I
C
=
10 mA, I
B
=
1 mA
I
C
=
10 mA, I
B
=
1 mA
V
CB
=
10 V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.1
μ
A
μ
A
Emitter cutoff current
I
EBO
h
FE
V
CE(sat)
0.1
Forward current transfer ratio
*
60
200
Collector to emitter saturation voltage
0.17
0.25
V
Base to emitter saturation voltage
V
BE(sat)
f
T
C
ob
1.0
V
Transition frequency
450
MHz
Collector output capacitance
2
6
pF
Turn-on time
t
on
t
off
t
stg
17
ns
Turn-off time
Refere to the measurement circuit
17
ns
Storage time
10
ns
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note)*: Rank classification
Rank
Q
R
h
FE
60 to 120
90 to 200
Marking symbol
2YQ
2YR
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參數(shù)描述
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