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參數(shù)資料
| 型號(hào)： | 2SC3795 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 中文描述： | 5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220F |
| 封裝： | TO-220F, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | 2SC3795 |
2
Power Transistors
2SC3795, 2SC3795A
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
80
60
20
50
70
40
10
30
(1)
(3)
(2)
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=2.0W)
Ambient temperature Ta (C)
C
C
0
10
8
2
6
4
0
8
6
2
5
7
4
1
3
T
C
=25C
50mA
20mA
100mA
150mA
200mA
300mA
400mA
600mA
800mA
1000mA
I
B
=1200mA
Collector to emitter voltage V
CE
(V)
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=5
T
C
=100C
25C
–25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=5
25C
100C
T
C
=–25C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
T
C
=100C
25C
–25C
V
CE
=5V
F
F
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
=10V
f=1MHz
T
C
=25C
T
T
0.1
Collector to base voltage V
CB
(V)
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
=0
f=1MHz
T
C
=25C
C
o
0
8
2
6
4
7
1
Collector current I
C
(A)
5
3
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
f
t
on
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=5
(I
B1
=–I
)
V
CC
=200V
T
C
=25C
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.003
0.01
0.03
0.1
0.3
1
3
10
Non repetitive pulse
T
C
=25C
I
CP
I
C
10ms
1ms
t=0.5ms
DC
2
Collector to emitter voltage V
CE
(V)
C
C
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