參數(shù)資料
型號(hào): 2SC3975
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
中文描述: 10 A, 500 V, NPN, Si, POWER TRANSISTOR
封裝: SC-92,TOP-3F-A1, 3 PIN
文件頁數(shù): 2/3頁
文件大小: 59K
代理商: 2SC3975
2
Power Transistors
2SC3975
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
120
100
80
60
40
20
(1)
(3)
(2)
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
12
10
8
6
4
2
T
C
=25C
50mA
40mA
30mA
20mA
10mA
5mA
I
B
=100mA
Collector to emitter voltage V
CE
(V)
C
C
0.1
1
10
100
0.3
Collector current I
C
(A)
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=5
–25C
25C
T
C
=100C
C
C
0.1
1
10
100
0.3
Collector current I
C
(A)
3
30
0.1
100
10
1
0.3
3
30
I
C
/I
B
=5
T
C
=–25C
25C
100C
B
B
0.1
1
10
100
0.3
Collector current I
C
(A)
3
30
1
1000
100
10
3
30
300
V
CE
=5V
–25C
T
C
=100C
25C
F
F
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
100
10
1
0.3
3
30
V
=10V
f=1MHz
T
C
=25C
T
T
1
3
10
30
100
10
10000
1000
100
30
300
3000
I
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
C
o
0
16
4
12
8
14
2
Collector current I
C
(A)
10
6
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
f
t
on
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=5
(2I
B1
=–I
B2
)
V
CC
=200V
T
C
=25C
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
DC
10ms
1ms
t=0.5ms
Collector to emitter voltage V
CE
(V)
C
C
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