參數(shù)資料
型號: 2SC4050KIETR
元件分類: 小信號晶體管
英文描述: 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SC-59A, MPAK-3
文件頁數(shù): 4/5頁
文件大小: 69K
代理商: 2SC4050KIETR
2SK3081
Rev.4.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
45
A
Drain peak current
ID(pulse)
Note1
180
A
Body-drain diode reverse drain current
IDR
45
A
Channel dissipation
Pch
Note2
75
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
30
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
10
A
VDS = 30 V, VGS = 0
Gate to source leak current
IGSS
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.0
2.0
V
ID = 1 mA, VDS = 10 V
RDS(on)
10
14
m
ID = 20 A, VGS = 10 V
Note3
Static drain to source on state
resistance
RDS(on)
15
25
m
ID = 20 A, VGS = 4 V
Note3
Forward transfer admittance
|yfs|
20
30
S
ID = 20 A, VDS = 10 V
Note3
Input capacitance
Ciss
1570
pF
Output capacitance
Coss
1100
pF
Reverse transfer capacitance
Crss
410
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
32
ns
Rise time
tr
300
ns
Turn-off delay time
td(off)
180
ns
Fall time
tf
200
ns
VGS = 10 V, ID = 20 A,
RL = 0.5
Body–drain diode forward voltage
VDF
1.0
V
IF = 45 A, VGS = 0
Body–drain diode reverse
recovery time
trr
75
ns
IF = 45 A, VGS = 0
diF/ dt = 50 A/
s
Note:
3. Pulse test
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