參數(shù)資料
型號(hào): 2SC4082T106/N
元件分類: 小信號(hào)晶體管
英文描述: VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: UMT3, SC-70, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 187K
代理商: 2SC4082T106/N
2/3
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.C
Data Sheet
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
Electrical characteristic curves
0.1 0.2
0.5
1
2
5
10 20
50
10
COLLECTOR CURRENT : IC (mA)
Fig.1 DC current gain vs. collector current
DC
CURRENT
TRANSFER
RATIO
:h
FE
100
20
50
200
500
Ta
=25°C
VCE
=10V
0.1 0.2
0.5
1
2
5
10 20
50
10
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-emitter saturation voltage
vs. collector current
COLLECTOR
SATURATION
VOLTAGE
:V
CE(sat)
(mV)
100
20
50
200
500
Ta
=25°C
IC/IB
=5
0.1 0.2
0.5
1
2
5
10 20
50
0.1
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.3 Capacitance vs. reverse bias voltage
OUTPUT
CAPACITANCE
:C
oB
(pF)
FEEDBACK
CAPACITANCE
:C
re
(pF)
1.0
0.2
0.5
2.0
5.0
Ta
=25°C
f
=1MHz
IE
=0A
Cob
Cre
0.1 0.2
0.5 1 2
5 10 20
50
100
EMITTER CURRENT : IE (mA)
Fig.4 Gain bandwidth product vs. emitter current
TRANSITION
FREQUENCY
:
f
T
(MHz)
1000
200
500
2000
5000
Ta
=25°C
VCE
=10V
0.1 0.2
0.5
1
2
5
10 20
50
1
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector to base time constance
vs. collector current
COLLECTOR
TO
BASE
TIME
CONSTANT
:
C
c
rbb'
(ps)
10
2
5
20
50
Ta
=25°C
VCE
=10V
f
=31.8MHz
0.1
0.2
0.5
1
2
5
10
0
FREQUENCY : f (GHz)
Fig.6 Insertion gain vs. frequency
INSERTION
GAIN
:
IS
21el
2
(dB)
5
10
15
20
25
Ta
=25°C
VCE
=10V
IC
=10mA
COLLECTOR CURRENT : Ic (mA)
Fig.7 Insertion gain vs. collector current
INSERTION
GAIN
:
IS
21el
2
(dB)
0.5
1
2
5
10
20
50
0
5
10
15
20
25
Ta
=25°C
VCE
=12V
f
=200MHz
02
4
6
8
10
12
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Insertion gain vs. collector voltage
INSERTION
GAIN
:
IS
21el
2
(dB)
5
10
15
20
25
30
Ta
=25°C
IC
=2mA
f
=200MHz
0.1 0.2
0.5
1
2
5
10 20
50
0
COLLECTOR CURRENT : IC (mA)
Fig.9 Noise factor vs. collector current
NOISE
FIGURE
:
NF(dB)
10
20
Ta
=25°C
VCE
=12V
f
=200MHz
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