
SILICON TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DATA SHEET
Document No. P10363EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1987
DESCRIPTION
The 2SC4092 is an NPN silicon epitaxial transistor designed for low-
noise amplifier at VHF, UHF band.
It is contained in 4 pins mini-mold package which enables high-isolation
gain.
FEATURES
NF = 1.5 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA
S21e2 = 12 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 20 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
70
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
0.1
A
VCB = 15 V, IE = 0
Emitter Cutoff Current
IEBO
0.1
A
VEB = 2.0 V, IC = 0
DC Current Gain
hFE
40
200
VCE = 10 V, IC = 20 mA
Gain Bandwidth Product
fT
6
GHz
VCE = 10 V, IC = 20 mA f = 1.0 GHz
Output Capacitance
Cob
0.55
0.9
pF
VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e2
9.5
12
dB
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF
1.5
3.0
dB
VCE = 10 V, IC = 5 mA, f = 1.0 GHz
Maximum Available Gain
MAG
14.5
dB
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
hFE Classification
Class
R4/RD *
R5/RE *
Marking
R4
R5
hFE
40 to 120
100 to 200
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
5
°
5
°
5
°
5
°
0
to
0.1
0.8
2.9±0.2
(1.8)
(1.9)
0.95
0.85
1.1
+0.2
0.1
0.16
+0.1
0.06
0.4
4
1
3
2
+0.1
0.05
2.8
+0.2
0.3
1.5
+0.2
0.1
0.6
+0.1
0.05
0.4
+0.1
0.05
0.4
+0.1
0.05