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參數(shù)資料
| 型號(hào)： | 2SC4092R5 |
| 廠商： | NEC Corp. |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 晶體管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | 2SC4092R5 |
SILICON TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DATA SHEET
Document No. P10363EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1987
DESCRIPTION
The 2SC4092 is an NPN silicon epitaxial transistor designed for low-
noise amplifier at VHF, UHF band.
It is contained in 4 pins mini-mold package which enables high-isolation
gain.
FEATURES
NF = 1.5 dB TYP. @f = 1.0 GHz, V
CE
= 10 V, I
C
= 5 mA
S
21e
2
= 12 dB TYP. @f = 1.0 GHz, V
CE
= 10 V, I
C
= 20 mA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
25
12
3.0
70
200
150
V
V
V
mA
mW
°
C
°
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
μ
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
μ
A
V
EB
= 2.0 V, I
C
= 0
DC Current Gain
h
FE
40
200
V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
6
GHz
V
CE
= 10 V, I
C
= 20 mA f = 1.0 GHz
Output Capacitance
C
ob
0.55
0.9
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
9.5
12
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.5
3.0
dB
V
CE
= 10 V, I
C
= 5 mA, f = 1.0 GHz
Maximum Available Gain
MAG
14.5
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
h
FE
Classification
Class
R4/RD *
R5/RE *
Marking
R4
R5
h
FE
40 to 120
100 to 200
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Emitter
Collector
Emitter
Base
5
°
5
°
5
°
5
°
0
0
2
(
(
0
0
1
+
0
0
+
0
0
4
1
3
2
+
0
2.8
1.5
+0.2
0.3
+0.2
0.1
0
+
0
0
+
0
0
+
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4092RD | BJT |
| 2SC4092RE | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC4093 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
| 2SC4093R26-T1 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC4093R26-T2 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-143VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4092RD | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
| 2SC4092RE | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
| 2SC4093 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4093(NE85639E) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC4093-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:12V 頻率 - 躍遷:7GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.1dB @ 1GHz 增益:13dB 功率 - 最大值:200mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:50 @ 20mA，10V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:TO-253-4，TO-253AA 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1 |
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