參數(shù)資料
型號： 2SC4138
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴散平面晶體管（高壓和高速開關(guān)晶體管）)
中文描述： 10 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝： MT-100, TO-3P, 3 PIN
文件頁數(shù)： 1/1頁
文件大小： 24K
代理商： 2SC4138
90
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4138
500
400
10
10(
Pulse
20)
4
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC4138
100
max
100
max
400
min
10to30
0.5
max
1.3
max
10
typ
85
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=6A
I
C
=6A, I
B
=1.2A
I
C
=6A, I
B
=1.2A
V
CE
=12V, I
E
=–0.7A
V
CB
=10V, f=1MHz
2S C4138
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat)–I
C
Temperature Characteristics
(Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0
0
2
4
6
8
10
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
1A
600mA
400mA
200mA
1.2A
I
B
=100mA
0.02
0.1
0.05
1
10
5
0.5
1.4
1
C
C
(
B
B
(
Collector Current I
C
(A)
V
BE
(sat)
V
CE
(sat)
0.1
1
0.5
10
5
0.1
0.5
5
10
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
200V
I
C
:I
B1
:–I
B2
=10:1:2
0.3
1
3
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
80
60
40
20
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
50
5
500
100
1
0.5
0.1
10
30
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=1A
Duty:less than 1%
10
50
5
100
500
1
0.5
0.1
10
30
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
100
μ
s
1ms
(I
C
/I
B
=5)
0
10
4
2
8
6
0
1.2
0.4
0.6
0.8
1.0
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCs ep
–CaTp
2CCeep
0.02
0.1
0.05
1
10
5
0.5
5
10
100
50
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(
)
33.3
I
C
(A)
6
V
(V)
–5
I
B2
(A)
–1.2
t
on
(
μ
s)
1
max
t
stg
(
μ
s)
3
max
t
f
(
μ
s)
0.5
max
I
(A)
0.6
V
(V)
10
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
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