- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370074 > 2SC4225 (NEC Corp.) MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SC4225 |
| 廠商： | NEC Corp. |
| 英文描述： | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
| 中文描述： | 微波低噪聲放大器NPN硅外延晶體管超小型模具 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 2SC4225 |
1996
DATA SHEET
SILICON TRANSISTOR
2SC4225
DESCRIPTION
The 2SC4225 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF through UHF band.
It has large dynamic range and good current characteristics.
FEATURES
Low Noise and High Gain
NF = 1.5 dB TYP.
S
21e
2
= 10 dB TYP.
at V
CE
= 10 V, I
C
= 5 mA, f = 1 GHz
at V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
(reference value)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CB0
V
CE0
V
EB0
I
C
P
T
T
j
T
stg
25
12
3.0
70
160
150
V
V
V
mA
mW
C
C
–65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
Characteristics
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Collector Cutoff Current
I
CB0
1.0
μ
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EB0
1.0
μ
A
V
EB
= 2 V, I
C
= 0
DC Current Gain
h
FE
40
80
200
V
CE
= 3 V, I
C
= 20 mA, pulsed
Gain Bandwidth Product
f
T
4
GHz
V
CE
= 3 V, I
C
= 20 mA, f = 1 GHz
Output Capacitance
C
ob
1.2
1.8
pF
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain
S
21e
2
7.5
9.0
dB
V
CE
= 3 V, I
C
= 20 mA, f = 1 GHz
Noise Figure
NF
1.5
3.0
dB
V
CE
= 3 V, I
C
= 5 mA, f = 1GHz
h
FE
Classifications
Rank
R2
R3
Marking
R2
R3
h
FE
40 to 120
100 to 200
Document No. P11192EJ2V0DS00 (2nd edition)
Date Published February 1996 P
Printed in Japan
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
1
3
2
0
+
–
0
0
+
–
0
+
–
0
0
0
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4225R2 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-323 |
| 2SC4225R3 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC4226 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
| 2SC4227 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
| 2SC4228 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4225R2 | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-323 |
| 2SC4225R3 | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-323 |
| 2SC4226 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4226(NE85630) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC4226_11 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Silicon Epitaxial Planar Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。