參數(shù)資料
型號(hào): 2SC4332-Z
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
中文描述: NPN硅外延的高晶體管高速開(kāi)關(guān)
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 34K
代理商: 2SC4332-Z
Data Sheet D16430EJ1V0DS
2
2SC4332, 2SC4332-Z
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to Emitter Voltage
V
CEO(SUS)
I
C
= 3.0 A, I
B
= 0.3 A, L = 1 mH
60
V
Collector to Emitter Voltage
V
CEX(SUS)
I
C
= 3.0 A, I
B1
=
I
B2
= 0.3 A,
V
BE(OFF)
=
1.5 V, L = 180
μ
H,
clamped
60
V
Collector Cut-off Current
I
CBO
V
CE
= 60 V, I
E
= 0
10
μ
A
Collector Cut-off Current
I
CER
V
CE
= 60 V, R
BE
= 51
, T
A
= 125
°
C
1.0
mA
Collector Cut-off Current
I
CEX1
V
CE
= 60 V, V
BE(OFF)
=
1.5 V
10
μ
A
Collector Cut-off Current
I
CEX2
V
CE
= 60 V, V
BE(OFF)
=
1.5 V,
T
A
= 125
°
C
1.0
mA
Emitter Cut-off Current
I
EBO
V
EB
= 5.0 V, I
C
= 0
10
μ
A
DC Current Gain
h
FE1
Note
V
CE
= 2.0 V, I
C
= 0.5 A
100
DC Current Gain
h
FE2
Note
V
CE
= 2.0 V, I
C
= 1.0 A
100
400
DC Current Gain
h
FE3
Note
V
CE
= 2.0 V, I
C
= 3.0 A
60
Collector Saturation Voltage
V
CE(sat)1
Note
I
C
= 3.0 A, I
B
= 0.15 A
0.3
V
Collector Saturation Voltage
V
CE(sat)2
Note
I
C
= 4.0 A, I
B
= 0.2 A
0.5
V
Base Saturation Voltage
V
BE(sat)1
Note
I
C
= 3.0 A, I
B
= 0.15 A
1.2
V
Base Saturation Voltage
V
BE(sat)2
Note
I
C
= 4.0 A, I
B
= 0.2 A
1.5
V
Collector Capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
130
pF
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
E
=
0.5 A
150
MHz
Turn-on Time
t
on
0.3
μ
s
Storage Time
t
stg
1.5
μ
s
Fall Time
t
f
I
C
= 3.0 A, R
L
= 16.7
,
I
B1
=
I
B2
= 0.15 A, V
CC
50 V
Refer to the test circuit.
0.3
μ
s
Note
Pulse test PW
350
μ
s, duty cycle
2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
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