參數(shù)資料
型號(hào)： 2SC4336
廠商： NEC Corp.
英文描述： NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
中文描述： NPN硅外延的高晶體管高速開關(guān)
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 128K
代理商： 2SC4336
Data Sheet D17261EJ1V0DS
2
2SC4336
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to Emitter Voltage
V
CEO(SUS)
I
C
= 5.0 A, I
B
= 0.6 A, L = 1 mH
100
V
V
CEX(SUS)
I
C
= 5.0 A, I
B1
=
I
B2
= 0.6 A,
V
BE(OFF)
=
1.5 V,
L = 180
μ
H, clamped
100
V
Collector Cut-off Current
I
CBO
V
CB
= 100 V, I
E
= 0
10
μ
A
I
CER
V
CE
= 100 V, R
BE
= 50
, T
A
= 125
°
C
1.0
mA
I
CEX1
V
CE
= 100 V, V
BE(OFF)
=
1.5 V
10
μ
A
I
CEX2
V
CE
= 100 V, V
BE(OFF)
=
1.5 V,
T
A
= 125
°
C
1.0
mA
Emitter Cut-off Current
DC Current Gain
Note
I
EBO
V
EB
= 5.0 V, I
C
= 0
10
μ
A
h
FE1
V
CE
= 2.0 V, I
C
= 1.0 A
100
h
FE2
V
CE
= 2.0 V, I
C
= 2.0 A
100
200
400
Collector Saturation Voltage
Note
h
FE3
V
CE
= 2.0 V, I
C
= 6.0 A
60
V
CE(sat)1
I
C
= 6.0 A, I
B
= 0.3 A
0.3
V
Base Saturation Voltage
Note
V
CE(sat)2
I
C
= 8.0 A, I
B
= 0.4 A
0.5
V
V
BE(sat)1
I
C
= 6.0 A, I
B
= 0.3 A
1.2
V
V
BE(sat)2
I
C
= 8.0 A, I
B
= 0.4 A
1.5
V
Collector Capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
120
pF
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 0.5 A
150
MHz
Turn-on Time
t
on
0.3
μ
s
Storage Time
t
stg
1.5
μ
s
Fall Time
t
f
I
C
= 6.0 A, R
L
= 8.3
,
I
B1
=
I
B2
= 0.3 A, V
CC
50 V
Refer to the test circuit.
0.3
μ
s
Note
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
V
CC
50 V
R
L
= 8.3
I
B1
I
B2
I
C
I
C
T.U.T.
V
IN
PW
PW
50 s
Duty Cycle
≤
2%
V
BB
5 V
t
on
t
stg
t
f
90%
I
B1
I
B2
10%
Base current
waveform
Collector current
waveform
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