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參數(shù)資料
| 型號： | 2SC4412-5 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | CP, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2SC4412-5 |
2SC4412
No.3019-1/3
Features
High breakdown voltage(VCEO≥300V).
Small reverse transfer capacitance and excellent high
frequency characteristic(Cre : 1.0pF typ).
Excellent DC current gain ratio(hFE ratio : 0.95 typ).
Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
300
V
Collector-to-Emitter Voltage
VCEO
300
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
50
mA
Collector Current (Pulse)
ICP
100
mA
Collector Dissipation
PC
250
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=200V, IE=0
0.1
A
Emitter Cutoff Current
IEBO
VCE=4V, IC=0
0.1
A
DC Current Gain
hFE1VCE=6V, IC=0.1mA
100*
320*
hFE2VCE=6V, IC=1mA
100
Marking : QT
Continued on next page.
* : The 2SC4412 is classsified by 0.1mA hFE as follows.
Rank
4
5
hFE
100 to 200
160 to 320
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN3019B
2SC4412
TV Camera Deflection
High-Voltage Driver Applications
Package Dimensions
unit : mm
2018B
[2SC4412]
11502 TS IM / D1598HA (KT) / 5189MO, TS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.4
0.95 0.95
1.9
2.9
0.5
1.5
2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC44124 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC44124 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4412 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC44125 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC44125 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4413-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS NPN 50V 0.1A SOT323 |
| 2SC4418LF608 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4420 | 功能描述:TRANS NPN 800VCEO 3A TOP-3F RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC444 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR60V .5A .8W |
| 2SC4440 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-2 600V 7A 30W ECB |
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