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參數(shù)資料
| 型號： | 2SC4417 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For intermadiate frequency amplification of TV image) |
| 中文描述： | 50 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SMINI3-G1, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 36K |
| 代理商： | 2SC4417 |
1
Transistor
2SC4417
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
I
Features
G
High transition frequency f
T
.
G
Satisfactory linearity of forward current transfer ratio h
FE
.
G
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
2.1
±
0.1
1
±
0
0
±
0
0
±
0
0
+
–
0
+
–
2
±
0
1.25
±
0.1
0.425
0.425
1
3
2
0
0
0
0
0.2
±
0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
45
35
4
50
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Symbol
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
re
Conditions
V
CE
= 20V, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 10V, I
E
= –10mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= –1mA, f = 10.7MHz
min
45
35
4
20
typ
50
500
max
10
100
0.5
1.5
Unit
μ
A
V
V
V
V
MHz
pF
Marking symbol :
2Z
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