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參數(shù)資料
| 型號(hào)： | 2SC4468 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(硅NPN三倍擴(kuò)散平面晶體管) |
| 中文描述： | 10 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | MT-100, TO-3P, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2SC4468 |
108
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1695)
2S C4468
Application :
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4468
200
140
6
10
4
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC4468
10
max
10
max
140
min
50
min
0.5
max
20
typ
250
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=200V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
3
2
1
0
0.5
1.0
2.0
1.5
Base Current I
B
(A)
C
C
(
I
C
=10A
5A
0
10
2
6
4
8
0
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1(a m
2 se)
–Cse
0.1
1
3
0.5
1
10
100
1000
2000
Time t(ms)
T
θ
j
(
100
50
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
5
3
100
200
50
0.1
1
0.5
10
30
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
100ms
3ms
1m
Without Heatsink
Natural Cooling
0.02
0.1
0.5
1
5
10
20
50
100
200
Collector Current I
C
(A)
D
F
(V
CE
=4V)
(V
CE
=4V)
Typ
0
0
2
4
6
10
8
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
150mA
200mA
100mA
75mA
50mA
20mA
I
B
=10mA
300mA
400mA
0.02
0.5
5
1
20
50
300
100
0.1
10
Collector Current I
C
(A)
D
F
125C
25C
–30C
0
–0.1
–1
–10
10
20
40
30
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(
)
12
I
C
(A)
5
V
(V)
–5
I
B2
(A)
–0.5
t
on
(
μ
s)
0.24
typ
t
stg
(
μ
s)
4.32
typ
t
f
(
μ
s)
0.40
typ
I
(A)
0.5
V
(V)
10
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
h
FE
Rank O(50to100), P(70to140), Y(90to180)
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| 2SC4488 | High-Voltage Switching Applications |
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| 2SC4482T-AN | 功能描述:兩極晶體管 - BJT BIP NPN 5A 20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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