2SC4504
No.3160-1/4
Features
High fT (fT=2.2GHz typ).
High current (IC=300mA).
Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
30
V
Collector-to-Emitter Voltage
VCEO
20
V
Emitter-to-Base Voltage
VEBO
3V
Collector Current
IC
300
mA
Collector Current (Pulse)
ICP
600
mA
Collector Dissipation
PC
0.5
W
Mounted on a ceramic board (250mm2
0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=20V, IE=0A
0.1
μA
Emitter Cutoff Current
IEBO
VEB=2V, IC=0A
5.0
μA
DC Current Gain
hFE1VCE=5V, IC=50mA
40*
200*
hFE2VCE=5V, IC=300mA
20
Marking : CM
Continued on next page
*: The 2SC4504 is classified by 50mA hFE as follows:
Rank
C
D
E
hFE
40 to 80
60 to 120
100 to 200
.
Ordering number : EN3160B
33110AB TK IM / 92304TN (PC)/D2598HA (KT)/72895MO/6279MO, TS X-6587
SANYO Semiconductors
DATA SHEET
2SC4504
NPN Epitaxial Planar Silicon Transistor
High-Definition CRT Display
Video Output Driver Applications
www.semiconductor-sanyo.com/network
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customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
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's products or
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