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參數(shù)資料
| 型號(hào)： | 2SC4536QQ |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
| 中文描述： | 晶體管|晶體管|叩| 15V的五（巴西）總裁|毫安一（c）|至243 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | 2SC4536QQ |
DATA SHEET
SILICON TRANSISTOR
2SC4536
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR
Document No. P10369EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1994
DESCRIPTION
The 2SC4536 is designed for use in middle power, low distortion low
noise figure RF amplifier. It features excellent linearity and large dynamic
range, which make it suitable for CATV, telecommunication, and other use,
it employs plastic surface mount type package (SOT-89).
FEATURES
Low Distortion
IM
2
= 57.5 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA
IM
3
= 82 dB TYP.
Low Noise
NF = 1.5 dB TYP.
Power Mini Mold Package Used. High Power Dissipation.
@ V
CE
= 10 V, I
C
= 50 mA
@ V
CE
= 10 V, I
C
= 10 mA, f = 1 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Maximum Voltage and Current (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Maximum Power Dissipation
Total Power Dissipation
at 25 C Ambient Temperature P
T
*
Maximum Temperatures
Junction Temperature
Storage Temperature Range
* 0.7 mm 16 cm
V
CBO
V
CEO
V
EBO
I
C
30
15
3.0
250
V
V
V
mA
2.0
W
T
j
T
stg
150
C
C
65 to +150
2
double sided ceramic substrate. (Copper plating)
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
0.03
+0.05
0.47
±0.06
0.42±0.06
0.42
4.5±0.1
1.6±0.2
3.0
E
B
C
1.5
0
2
4
1.5±0.1
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