參數(shù)資料
型號: 2SC4536QS
廠商: NEC Corp.
英文描述: TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243
中文描述: 晶體管|晶體管|叩| 15V的五(巴西)總裁|毫安一(c)|至243
文件頁數(shù): 2/8頁
文件大?。?/td> 60K
代理商: 2SC4536QS
2
2SC4536
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
5.0
A
V
CB
= 20 V, I
E
= 0
Emitter Cutoff Current
I
EBO
5.0
A
V
EB
= 2 V, I
C
= 0
DC Current Gain
h
FE
40
200
V
CE
= 10 V, I
C
= 50 mA
Insertion Power Gain
S
21e
2
5.5
7.3
dB
V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
*1
Noise Figure 1
NF
1
1.5
dB
V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
*2
Noise Figure 2
NF
2
2.0
dB
V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
*2
2nd Intermodulation Distortion
IM
2
59.0
dB
V
CE
= 10 V, I
C
= 50 mA, R
S
= R
L
= 75
Pin = 105 dB V/75 , f
1
= 190 MHz
f
2
= 90 MHz, f = f
1
f
2
3rd Intermodulation Distortion
IM
3
82.0
dB
V
CE
= 10 V, I
C
= 50 mA, R
S
= R
L
= 75
Pin = 105 dB V/75 , f
1
= 190 MHz
f
2
= 200 MHz, f = 2 f
1
f
2
*1
Pulsed: PW 350 s, Duty Cycle 2 %
*2
R
S
= R
L
= 50 , untuned
h
FE
Classification
Class
QQ
QR
QS
Marking
QQ
QR
QS
h
FE
40 to 80
60 to 120
100 to 200
TYPICAL CHARACTERISTICS (T
A
= 25 C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
B
= 0.6 mA
V
CE
-Collector to Emitter Voltage-V
I
C
-
10
20
40
60
80
100
0
20
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
h
F
-
10
100
1
0.1
50
10
100
300
1000
0.4 mA
0.5 mA
0.3 mA
0.2 mA
0.1 mA
V
CE
= 10 V
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