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參數(shù)資料
| 型號(hào)： | 2SC454 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92(2), 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SC454 |
2SC454
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.5
AV
CB = 18 V, IE = 0
Emitter cutoff current
I
EBO
—
0.5
AV
EB = 2 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
500
V
CE = 12 V, IC = 2 mA
Base to emitter voltage
V
BE
—
0.63
0.75
V
CE = 12 V, IC = 2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
0.2
V
I
C = 10 mA, IB = 1 mA
Gain bandwidth product
f
T
—
230
—
MHz
V
CE = 12 V, IC = 2 mA
Collector output capacitance
Cob
—
3.5
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Noise figure
NF
—
25
dB
V
CE = 6 V, IC = 0.1 mA,
f = 1 kHz, R
g = 500
IF power gain
IFG
—
35
—
dB
V
CE = 12 V, IC = 1 mA,
f = 455 kHz, Rg = 1.5 k
,
R
L = 40 k
Note:
1. The 2SC454 is grouped by h
FE as follows.
BC
D
100 to 200
160 to 320
250 to 500
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