- 您現在的位置：買賣IC網 > PDF目錄371511 > 2SC4606 (PANASONIC CORP) Silicon NPN epitaxial planer type(For low-frequency driver amplification) PDF資料下載
參數資料
| 型號： | 2SC4606 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
| 中文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 48K |
| 代理商： | 2SC4606 |
1
Transistor
2SC4606
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA1762
I
Features
G
High collector to emitter voltage V
CEO
.
G
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
80
80
5
1
0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 100
μ
A, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 5V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
80
80
5
130
50
typ
100
0.2
0.85
120
11
max
0.1
330
0.4
1.2
20
Unit
μ
A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
R
S
h
FE1
130 ~ 220
185 ~ 330
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC4617G | NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
| 2SC4617T1 | NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
| 2SC4617T1G | NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
| 2SC4617 | NPN Silicon General Purpose Amplifier Transistor(通用型硅NPN放大器晶體管) |
| 2SC4624 | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC4614S-AN | 功能描述:兩極晶體管 - BJT BIP NPN 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4614T-AN | 功能描述:兩極晶體管 - BJT BIP NPN 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4615D-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS NPN HIGHV 400V 1A TO-251 |
| 2SC4615E-TL-E | 制造商:SANYO 功能描述:mom 400V 1A 100 to 200 TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS NPN HIGHV 400V 1A TO-251 制造商:Sanyo 功能描述:0 |
| 2SC4616E-TL-E | 制造商:SANYO 功能描述:mom 400V 2A 100 to 200 TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS NPN HIGHV 400V 2A TO-251 制造商:Sanyo 功能描述:0 |
發(fā)布緊急采購，3分鐘左右您將得到回復。