參數(shù)資料
型號(hào)： 2SC4617T1
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
中文描述： 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： CASE 463-01, SC-75, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 57K
代理商： 2SC4617T1
2SC4617
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
(BR)CBO
50
Vdc
Collector-Emitter Voltage
V
(BR)CEO
50
Vdc
Emitter-Base Voltage
V
(BR)EBO
5.0
Vdc
Collector Current Continuous
I
C
100
mAdc
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 1)
P
D
125
mW
Junction Temperature
T
J
150
°
C
Storage Temperature Range
T
stg
55 ~ +150
°
C
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (I
C
= 50 Adc, I
E
= 0)
V
(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
50
Vdc
Emitter-Base Breakdown Voltage (I
E
= 50 Adc, I
E
= 0)
V
(BR)EBO
5.0
Vdc
Collector-Base Cutoff Current (V
CB
= 30 Vdc, I
E
= 0)
I
CBO
0.5
A
Emitter-Base Cutoff Current (V
EB
= 4.0 Vdc, I
B
= 0)
I
EBO
0.5
A
Collector-Emitter Saturation Voltage (Note 2)
(I
C
= 60 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
0.4
Vdc
DC Current Gain (Note 2)
(V
CE
= 6.0 Vdc, I
C
= 1.0 mAdc)
h
FE
120
560
Transition Frequency (V
CE
= 12 Vdc, I
C
= 2.0 mAdc, f = 30 MHz)
f
T
180
MHz
Output Capacitance (V
CB
= 12 Vdc, I
C
= 0 Adc, f = 1 MHz)
2. Pulse Test: Pulse Width
≤
300 s, D.C.
≤
2%.
C
OB
2.0
pF
ORDERING INFORMATION
Device
Package
Shipping
2SC4617
SC75
3,000 / Tape & Reel
2SC4617G
SC75
(PbFree)
3,000 / Tape & Reel
2SC4617T1
SC75
3,000 / Tape & Reel
2SC4617T1G
SC75
(PbFree)
3,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相關(guān)PDF資料
PDF描述
2SC4617T1G NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC4617T1G 功能描述:兩極晶體管 - BJT 100mA 50V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4617TL 制造商:ROHM Semiconductor 功能描述:2S 4617 TL
2SC4617TL/Q 制造商:ROHM Semiconductor 功能描述:
2SC4617TLQ 功能描述:兩極晶體管 - BJT NPN 50V 0.15A SOT-416 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4617TLR 功能描述:兩極晶體管 - BJT NPN 50V 0.15A SOT-416 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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