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參數(shù)資料
| 型號： | 2SC4621 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP-3, FULL PACK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 175K |
| 代理商： | 2SC4621 |
1
Power Transistors
2SC4621
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q
High-speed switching
q
High collector to base voltage VCBO
q
Wide area of safe operation (ASO)
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
500
400
7
15
7
3
70
3.0
150
–55 to +150
Unit
V
A
W
C
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.6A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 3A, IB1 = 0.6A, IB2 = –1.2A,
VCC = 150V
min
400
15
8
typ
30
max
100
1
1.5
0.7
2
0.3
Unit
A
V
MHz
s
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0
±0.3
21.0
±0.5
16.2
±0.5
12.5
Solder
Dip
3.5
0.7
15.0
±0.2
5.0
±0.2
11.0
±0.2
10.9
±0.5
5.45
±0.3
3
2
1
1.1
±0.1
2.0
±0.2
0.6
±0.2
2.0
±0.1
φ3.2±0.1
3.2
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4623 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO-126ML 250V 3A 10W ECB |
| 2SC4626JCL | 功能描述:TRANS NPN 20VCEO 30MA SSMINI-3 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| 2SC4627 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4627J0L | 功能描述:TRANS NPN HF 20VCEO 15MA SS-MINI RoHS:是 類別:分離式半導體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| 2SC4630 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-220F1 1500V .1A 2W |
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