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參數(shù)資料
| 型號(hào)： | 2SC4713KT146 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SMT3, SC-59, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 2SC4713KT146 |
2SC4774 / 2SC4713K
Transistors
Rev.B
2/2
Electrical characteristic curves
1
0
2345
0
10
8
6
4
2
5mA
35mA
30mA
25mA
20mA
15mA
10mA
IB
=0A
Ta
=25°C
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1
Grounded emitter output
characteristics ( )
0.1
0
0.2
0.3
0.4
0.5
0
50
40
30
20
10
0.3mA
0.4mA
0.5mA
1.0mA
0.2mA
0.1mA
IB
=0mA
Ta
=25°C
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2
Grounded emitter output
characteristics (
)
0.4
0
0.8
1.2
1.6
2.0
0
50
40
30
20
10
125
°C
25
°C
25
°C
VCE
=5V
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3
Grounded emitter propagation
characteristics
50
0.1
20
0.2
10
0.5
5
12
20
10
5
50
100
200
500
1000
COLLECTER
SATURATION
VOLTAGE
:
V
CE(sat)
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.5
Collector-emitter saturation
voltage vs. collector current
Ta
=25°C
IC/IB
=10
50
0.1
20
0.2
10
0.5
5
12
20
10
50
100
200
500
1000
DC
CURRENT
TRANSFER
RATIO
:
h
FE
COLLECTOR CURRENT : IC (mA)
Fig.4
DC current gain vs. collector current
Ta
=25°C
VCE
=5V
50
0.1
20
0.2
10
0.5
5
12
50
20
100
200
500
1000
2000
GAIN
BANDWIDTH
PRODUCT
:
f
T
(MHz)
COLLECTOR CURRENT : IC (mA)
Fig.6
Gain bandwidth product vs.
collector current
Ta
=25°C
VCE
=5V
50
0.1
20
0.2
10
0.5
5
12
1
2
5
10
20
50
ON
RESISTANE
:
R
on
(
)
BASS CURRENT : IB (mA)
Fig.9
Output-on resistance vs.
base current
Ta
=25°C
f
=500kHz
υi=100mVrms
RL
=1k
50
0.1
20
0.2
10
0.5
5
12
0.5
0.2
1
2
5
10
20
FEEDBACK
CAPACITIANCE
:
C
re
(pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7
Collector output capacitance
vs. voltage
Ta
=25°C
f
=1MHz
50
0.1
20
0.2
10
0.5
5
12
0.5
0.2
1
2
5
10
20
OUTPUT
CAPACITANCE
:
C
ob
(pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Back capacitance voltage
Ta
=25°C
f
=1MHz
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| 2SC4713KT146R | 功能描述:兩極晶體管 - BJT TRANS GP BJT NPN 6V 0.05A 3PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4713KT146S | 功能描述:兩極晶體管 - BJT NPN 6V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4725TL | 制造商:ROHM Semiconductor 功能描述: |
| 2SC4725TLP | 功能描述:兩極晶體管 - BJT NPN 20V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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