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參數資料
| 型號： | 2SC4715 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) |
| 中文描述： | 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | NS-B1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SC4715 |
1
Transistor
2SC4715
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
I
Features
G
Satisfactory linearity of forward current transfer ratio h
FE
.
G
High collector to emitter voltage V
CEO
.
G
Small collector output capacitance C
ob
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
4.0
±
0.2
marking
2.54
±
0.15
1.27
1.27
3
±
0
1
±
0
2
±
0
0
±
0
0
1
2
3
+
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
150
150
5
100
50
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
Noise voltage
Symbol
I
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
C
ob
f
T
NV
Conditions
V
CB
= 100V, I
E
= 0
I
C
= 100
μ
A, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 30mA, I
B
= 3mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
150
5
130
typ
160
150
max
1
330
1
3
Unit
μ
A
V
V
V
pF
MHz
mV
*1
h
FE
Rank classification
Rank
R
S
h
FE
130 ~ 220
185 ~ 330
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