參數(shù)資料
型號: 2SC4805G-R
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, SMINI3-F2, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 249K
代理商: 2SC4805G-R
Transistors
1
Publication date: May 2007
SJC00367AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4805G
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■ Features
High transition frequency f
T
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 10 V, I
E
= 01
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 01
A
Forward current transfer ratio *
hFE
VCE = 8 V, IC = 20 mA
50
300
Transition frequency
fT
VCE
= 8 V, I
C
= 15 mA, f = 1.5 GHz
7.0
8.5
GHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
0.6
1.0
pF
(Common base, input open circuited)
Forward transfer gain
S
21e
2
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
7
9
dB
Maximum unilateral power gain
GUM
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
10
dB
Noise figure
NF
VCE
= 8 V, I
C
= 7 mA, f = 1.5 GHz
2.2
3.0
dB
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
10
V
Emitter-base voltage (Collector open)
VEBO
2V
Collector current
IC
65
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
hFE
50 to 120
100 to 170
150 to 300
50 to 300
Marking symbol
3SQ
3SR
3SS
3S
Product of no-rank is not classified and have no indication for rank.
■ Package
Code
SMini3-F2
Marking Symbol: 3S
Pin Name
1: Base
2: Emitter
3: Collector
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