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參數(shù)資料
| 型號： | 2SC4809J |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For high-frequency amplification/oscillation/mixing |
| 中文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SSMINI3-F1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 2SC4809J |
Transistors
2SC4809J
Silicon NPN epitaxial planar type
1
Publication date: August 2003
SJC00303AED
For high-frequency amplification/oscillation/mixing
■
Features
High transition frequency f
T
Small collector output capacitance (Common base, input open cir-
cuited) C
ob
and reverse transfer capacitance (Common emitter) C
rb
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
10
V
Emitter-base voltage (Collector open)
3
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
T
j
125
mW
Junction temperature
125
°
C
°
C
Storage temperature
T
stg
55 to
+
125
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
10 V, I
E
=
0
V
CE
=
4 V, I
C
=
5 mA
h
FE2
: V
CE
=
4 V, I
C
=
100
μ
A
h
FE1
: V
CE
=
4 V, I
C
=
5 mA
I
C
=
20 mA, I
B
=
4 mA
V
CB
=
4 V, I
E
=
5 mA, f
=
200 MHz
V
CB
=
4 V, I
E
=
0, f
=
1 MHz
10
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
3
V
Collector-base cutoff current (Emitter open)
1
μ
A
Forward current transfer ratio
h
FE
h
FE
75
400
h
FE
ratio
*
0.75
1.6
Collector-emitter saturation voltage
V
CE(sat)
0.5
V
Transition frequency
f
T
C
ob
1.4
1.9
2.7
GHz
Collector output capacitance
(Common base, input open circuited)
1.4
pF
Reverse transfer capacitance
(Common emitter)
C
rb
V
CB
=
4 V, I
E
=
0, f
=
1 MHz
0.45
pF
Collector-base parameter
r
bb
' C
C
V
CB
=
4 V, I
E
=
5 mA, f
=
31.9 MHz
11
ps
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
0.27
±
0.02
3
1
2
0.12
+0.03
0
±
0
(
0
1
±
0
0
0
0
+
–
(
5
5
1.60
+0.05
1.00
±
0.05
(0.50)(0.50)
+
–
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: 1S
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.* :
h
FE
=
h
FE2
/ h
FE1
Unit : mm
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