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參數(shù)資料
| 型號(hào)： | 2SC4885-R13 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-70, SUPERMINI-3 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 66K |
| 代理商： | 2SC4885-R13 |
DATA SHEET
SILICON TRANSISTOR
2SC4885
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS SUPER MINI MOLD
DATA SHEET
Document No. P10410EJ2V0DS00 (2nd edition)
(Previous No, TC-2365)
Date Published March 1997 N
Printed in Japan
1993
FEATURES
Excellent Low NF in Low Frequency Band
Low Voltage Use
Low Cob : 0.9 pF TYP.
Low Noise Voltage : 90 mV TYP.
Super Mini Mold Package. EIAJ : SC-70
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
13
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
50
mA
Total Power Dissipation
PT
120
mW
Junction Temperature
Tj
125
C
Storage Temperature
Tstg
55 to +125
C
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
0.1
AVCB = 15 V, IE = 0
Emitter Cutoff Current
IEBO
0.1
AVEB = 2 V, IC = 0
Collector to Base Saturation Voltage
VCE (sat)
0.3
V
hFE = 10, IC = 5 mA
DC Current Gain
hFE
60
150
VCE = 5 V, IC = 5 mA
*1
Gain Bandwidth Product
fT
2.5
3.5
GHz
VCE = 5 V, IC = 5 mA
Collecter Capacitance
Cob
0.8
1.2
pF
VCB = 5 V, IE = 0, f = 1 MHz
Insertion Power Gain
S21e2
7.0
9.0
dB
VCE = 5 V, IC = 5 mA, f = 1 GHz
Noise Figure
NF
3.0
dB
VCE = 5 V, IC = 5 mA, f = 1 GHz
Noise Voltage
NV
90
200
mV
See Test Cirucit
*1 Pulse Measurement PW
350 s, Duty Cycle 2 %
hFE Classification
Rank
R13
Marking
R13
hFE
60 to 150
PACKAGE DIMENSIONS
(Units: mm)
1.25±0.1
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.1±0.1
2.0±0.2
0.9±0.1
0
to
0.1
0.65
0.3
0.65
0.3
+0.1
0
0.3
+0.1
0
0.15
+0.1
0.05
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