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參數(shù)資料
| 型號(hào)： | 2SC4955-T83 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 2SC4955-T83 |
1998
Document No. D16195EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SB1116, 1116A
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Low VCE(sat)
VCE(sat) =
0.20 V TYP. (IC = 1.0 A, IB = 50 mA)
High PT in small dimension with general-purpose
PT = 0.75 W, VCEO =
50/60 V, IC(DC) = 1.0 A
Complementary transistor with 2SD1616 and 1616A
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Ratings
Parameter
Symbol
2SB1116 2SB1116A
Unit
Collector to base voltage
VCBO
60
80
V
Collector to emitter voltage
VCEO
50
60
V
Emitter to base voltage
VEBO
6.0
V
Collector current (DC)
IC(DC)
1.0
A
Collector current (pulse)
IC(pulse)*
2.0
A
Total power dissipation
PT
0.75
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
2SB1116, 1116A
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
60 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB =
6.0 V, IC = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 100 mA
135
600/400
DC current gain
hFE2 **
VCE =
2.0 V, IC = 1.0 A
81
DC base voltage
VBE **
VCE =
2.0 V, IC = 50 mA
600
650
700
mV
Collector saturation voltage
VCE(sat) **
IC =
1.0 A, IB = 50 mA
0.20
0.3
V
Base saturation voltage
VBE(sat) **
IC =
1.0 A, IB = 50 mA
0.9
1.2
V
Output capacitance
Cob
VCB =
10 V, IE = 0, f = 1.0 MHz
25
pF
Gain bandwidth product
fT
VCE =
2.0 V, IC = 100 mA
70
120
MHz
Turn-on time
ton
0.07
s
Storage temperature
tstg
0.70
s
Fall time
tf
VCC =
10 V, IC = 100 mA
IB1 =
IB2 = 10 mA,
VBE(off) = 2 to 3 V
0.07
s
** Pulse test PW
≤ 350
s, duty cycle ≤ 2%
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|---|---|
| 2SC4957-A | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 6V 0.03A 4-Pin Mini-Mold |
| 2SC4957-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC4957-T1-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 晶體管類(lèi)型:NPN 電壓 - 集射極擊穿（最大值）:6V 頻率 - 躍遷:12GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.5dB @ 2GHz 增益:11dB 功率 - 最大值:180mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:75 @ 10mA，3V 電流 - 集電極（Ic）（最大值）:30mA 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-253-4，TO-253AA 供應(yīng)商器件封裝:SOT-143 標(biāo)準(zhǔn)包裝:3,000 |
| 2SC4959-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC4960 | 功能描述:TRANS NPN 800VCEO 1A TOP-3F RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類(lèi)型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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