參數(shù)資料
型號(hào)： 2SC5001TLQ
元件分類： 小信號(hào)晶體管
英文描述： 10000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù)： 2/3頁
文件大小： 66K
代理商： 2SC5001TLQ
2SC5001
Transistors
Rev.A
2/2
Electrical characteristics (Ta=25
°C)
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
0
2
4
6
8
10
12
Ta
=25
°C
IB
=0mA
5mA
10mA
15mA
20mA
25mA
30mA
35mA
40mA
45mA
50mA
COLLECTOR
CURRENT
:
I
C
(A)
BASE TO EMITTER VOLTAGE : VBE(on) (V)
Fig.2 Ground emitter propagation
characteristics
1.4
0.4
0.6
0.8
1.0
1.2
0.2
0
1m
2m
5m
10m
20m
50m
100m
200m
500m
1
2
5
10
VCE
=2V
Ta
=125
°C
25
°C
40
°C
20m
12
5
10
20
50m
100m 200m 500m
DC
CURRENT
GAIN
:
h
EF
COLLECTOR CURRENT : IC (A)
10
20
50
100
200
500
1000
2000
5000
10000
Fig.3 DC current gain vs. collector current
VCE
=5V
2V
1V
Ta
=25
°C
10m 20m
50m
100m 200m
500m
12
5
10 20
2
5
10
20
50
100
200
500
1000
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC (A)
1
Fig.4 Collector-emitter saturation voltage
vs. collector current
IC/IB
=80
20
50
Ta
=25
°C
10m
100m
1
10
TRANSITION
FREQUENCY
:
f
T
(MHz)
EMITTER CURRENT : IE (A)
1
5
2
10
20
50
100
200
500
1000
Fig.5 Gain bandwidth product
vs. emitter current
VCE
=5V
Ta
=25
°C
f
=50MHz
0.05
0.1
0.2
0.5
1
2
5
10
20
50
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
50
20
10
100
200
500
1000
2000
5000
10000
Fig.6 Collector output capacitance
vs. collector-base voltage
IE
=0A
Ta
=25
°C
f
=1MHz
0.01 0.02
0.05
0.1 0.2
0.5
1 2
5
10 20
50 100
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
500m
200m
100m
50m
20m
10m
1
2
5
10
20
50
100
Fig.7 Safe operating area
Ta
=25
°C
DC
Pw
=
10ms
Pw
=100ms
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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