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參數(shù)資料
| 型號： | 2SC5018 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching) |
| 中文描述： | 800 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-2-A1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SC5018 |
1
Transistor
2SC5018
Silicon NPN triple diffusion planer type
For high breakdown voltage high-speed switching
I
Features
G
High collector to base voltage V
CBO
.
G
High emitter to base voltage V
EBO
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
±
0.1
4
±
0
1
±
0
2.5
±
0.5
2.5
±
0.5
2
±
0
6.9
±
0.1
1.05
±
0.05
(1.45)
4.0
0.7
0.8
0
0
0
1
1
0.65 max.
0.45
+0.1
0
+
–
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
500
400
7
1.5
0.8
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fill time
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 500V, I
E
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 300mA
*1
I
C
= 100mA, I
B
= 10mA
*1
I
C
= 100mA, I
B
= 10mA
*1
V
CB
= 10V, I
E
= –50mA, f = 10MHz
I
C
= 200mA, I
B1
= 40mA
I
B2
= –40mA, V
CC
= 150V
min
50
10
typ
0.1
0.8
20
0.7
4.0
0.4
max
100
100
300
0.5
1.0
Unit
μ
A
μ
A
V
V
MHz
μ
s
μ
s
μ
s
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*1
Pulse measurement
1.2
±
0.1
0.65
0.45
0.1
+
–
Note:In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
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